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Fabrication and characterization of air-stable, ambipolar heterojunction-based organic light-emitting field-effect transistors
- Authors
- Seo, Hoon-Seok; Zhang, Ying; An, Min-Jun; Choi, Jong-Ho
- Issue Date
- 11월-2009
- Publisher
- ELSEVIER
- Keywords
- Neutral cluster beam deposition (NCBD); Air-stable; Ambipolar organic light-emitting field-effect transistors (OLEFETs); alpha,omega-Dihexylsexithiophene (DH6T); N,N ' -Ditridecylperylene-3.4,9,10-tetracarboxylic diimide (P13); Bilayer heterojunction
- Citation
- ORGANIC ELECTRONICS, v.10, no.7, pp.1293 - 1299
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 10
- Number
- 7
- Start Page
- 1293
- End Page
- 1299
- ISSN
- 1566-1199
- Abstract
- We present our first application of the neutral cluster beam deposition (NCBD) method to fabricate bilayer heterojunction-based organic light-emitting field-effect transistors (OLEFETs) by superimposing two layers of alpha,omega-dihexylsexithiophene (DH6T) and N,N'-ditridecylperylene-3,4.9,10-tetracarboxylic diimide (P13) successively. Based upon well-balanced ambipolarity (hole and electron field-effect mobilities of 2.22 x 10(-2) and 2.78 x 10(-2) cm(2)/Vs), the air-stable CLEFETs have demonstrated good field-effect characteristics, stress-free operational stability and electroluminescence under ambient condition. (C) 2009 Elsevier B.V. All rights reserved.
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