Percolation threshold related to field-effect transistors using thin multi-walled carbon nanotubes composites

Abstract

We fabricated thin-film field-effect transistors (TF-FETs) using thin multi-walled carbon nanotubes (t-MWCNTs) and poly (methyl methacrylate) (PMMA) composites as the active layer. The gate-dependent current-voltage characteristics, the current on/off ratio (I-on/off), and the dc conductivity (sigma(dc)) were measured as a function of various weight (wt.%) of t-MWCNTs. The typical p-type FET characteristics were observed. We found that the field-effect I-on/off increased rapidly for TF-FETs with a wt.% of t-MWCNTs below 0.6. For the TF-FETs with a wt.% of t-MWCNT above 0.6, the I-on/off was relatively low. From the measured sigma(dc) as a function of the wt.% of t-MWCNTs, the percolation threshold (p(c)) was observed to be approximately 0.6 wt.% for the t-MWCNT composites. We infer that the TF-FET characteristics are closely related to the p(c) for the charge conduction of the t-MWCNTs composites. (C) 2009 Elsevier B.V. All rights reserved.