Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer
DC Field | Value | Language |
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dc.contributor.author | Jung, Se-Yeon | - |
dc.contributor.author | Kim, Yoon-Han | - |
dc.contributor.author | Kong, Young Shik | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-08T12:49:53Z | - |
dc.date.available | 2021-09-08T12:49:53Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2009-10 | - |
dc.identifier.issn | 0749-6036 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119168 | - |
dc.description.abstract | We investigate the effect of a 100 nm-thick NiZn alloy (10 wt% Zn) capping layer on the thermal and electrical properties of Ag reflectors (200 nm) for flip-chip light-emitting diodes (LEDs). It is shown that the introduction of the NiZn capping layer minimizes the formation of interfacial voids and surface agglomeration. Furthermore, LEDs fabricated with the NiZn-capping-layer-combined contacts produce better output power as compared to those with the Ag only reflectors. For example, the LEDs with the 400 degrees C-annealed Ag/NiZn contacts give higher output power by similar to 36% than those with the 400 degrees C-annealed Ag only contacts. X-ray photoemission spectroscopy and Auger electron spectroscopy measurements are performed to understand the improved electrical properties of the LEDs fabricated with the NiZn-capping-layer-combined Ag contacts. (C) 2009 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | - |
dc.subject | P-TYPE GAN | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | LOW-RESISTANCE | - |
dc.subject | LEDS | - |
dc.title | Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.spmi.2009.04.007 | - |
dc.identifier.scopusid | 2-s2.0-70249086189 | - |
dc.identifier.wosid | 000271339900006 | - |
dc.identifier.bibliographicCitation | SUPERLATTICES AND MICROSTRUCTURES, v.46, no.4, pp.578 - 584 | - |
dc.relation.isPartOf | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.title | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.volume | 46 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 578 | - |
dc.citation.endPage | 584 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | LEDS | - |
dc.subject.keywordAuthor | LED | - |
dc.subject.keywordAuthor | p-type Ohmic contact | - |
dc.subject.keywordAuthor | Ag reflector | - |
dc.subject.keywordAuthor | NiZn capping layer | - |
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