Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer
- Authors
- Jung, Se-Yeon; Kim, Yoon-Han; Kong, Young Shik; Seong, Tae-Yeon
- Issue Date
- 10월-2009
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- LED; p-type Ohmic contact; Ag reflector; NiZn capping layer
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.46, no.4, pp.578 - 584
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 46
- Number
- 4
- Start Page
- 578
- End Page
- 584
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/119168
- DOI
- 10.1016/j.spmi.2009.04.007
- ISSN
- 0749-6036
- Abstract
- We investigate the effect of a 100 nm-thick NiZn alloy (10 wt% Zn) capping layer on the thermal and electrical properties of Ag reflectors (200 nm) for flip-chip light-emitting diodes (LEDs). It is shown that the introduction of the NiZn capping layer minimizes the formation of interfacial voids and surface agglomeration. Furthermore, LEDs fabricated with the NiZn-capping-layer-combined contacts produce better output power as compared to those with the Ag only reflectors. For example, the LEDs with the 400 degrees C-annealed Ag/NiZn contacts give higher output power by similar to 36% than those with the 400 degrees C-annealed Ag only contacts. X-ray photoemission spectroscopy and Auger electron spectroscopy measurements are performed to understand the improved electrical properties of the LEDs fabricated with the NiZn-capping-layer-combined Ag contacts. (C) 2009 Elsevier Ltd. All rights reserved.
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