Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency
DC Field | Value | Language |
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dc.contributor.author | Hong, Eun-Ju | - |
dc.contributor.author | Byeon, Kyeong-Jae | - |
dc.contributor.author | Park, Hyoungwon | - |
dc.contributor.author | Hwang, Jaeyeon | - |
dc.contributor.author | Lee, Heon | - |
dc.contributor.author | Choi, Kyungwoo | - |
dc.contributor.author | Kim, Hyeong-Seok | - |
dc.date.accessioned | 2021-09-08T13:05:13Z | - |
dc.date.available | 2021-09-08T13:05:13Z | - |
dc.date.created | 2021-06-11 | - |
dc.date.issued | 2009-10 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119224 | - |
dc.description.abstract | Various sized nano-patterns, ranging from 0.8 mu m x 0.4 mu m to 2.0 mu m x 1.0 mu m were formed on the p-GaN top cladding layer of green LED, in order to increase photon extraction efficiency by suppressing total internal reflection. Fabrication of nano-patterns was done by UV nanoimprint lithography and reactive ion etching of p-GaN using SiCl4 and At gases using SiO2 as an etch mask. The effect of various nano-patterns on top p-GaN layer was investigated by photoluminescence. Compared to LED structure without nano-patterns on top cladding layer, the LED structures with sub-micron sized nano-patterns exhibit up to four times stronger emission intensity. This implies that the photon extraction efficiency of LED structures was increased by nano-patterns on top p-GaN layer. However, the luminescence intensity of LED structures with patterns greater than a micron, was less increased. (C) 2009 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | DRY-ETCH DAMAGE | - |
dc.subject | NANOIMPRINT LITHOGRAPHY | - |
dc.subject | RECOVERY | - |
dc.subject | PERFORMANCE | - |
dc.subject | IMPROVEMENT | - |
dc.subject | INTENSITY | - |
dc.title | Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1016/j.sse.2009.05.007 | - |
dc.identifier.scopusid | 2-s2.0-68349125558 | - |
dc.identifier.wosid | 000270161500007 | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.53, no.10, pp.1099 - 1102 | - |
dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 53 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1099 | - |
dc.citation.endPage | 1102 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | DRY-ETCH DAMAGE | - |
dc.subject.keywordPlus | NANOIMPRINT LITHOGRAPHY | - |
dc.subject.keywordPlus | RECOVERY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.subject.keywordPlus | INTENSITY | - |
dc.subject.keywordAuthor | Nano-pattern | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Photon extraction efficiency | - |
dc.subject.keywordAuthor | Green LED | - |
dc.subject.keywordAuthor | Photoluminescence | - |
dc.subject.keywordAuthor | Nanoimprint lithography | - |
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