Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency
- Authors
- Hong, Eun-Ju; Byeon, Kyeong-Jae; Park, Hyoungwon; Hwang, Jaeyeon; Lee, Heon; Choi, Kyungwoo; Kim, Hyeong-Seok
- Issue Date
- 10월-2009
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Nano-pattern; GaN; Photon extraction efficiency; Green LED; Photoluminescence; Nanoimprint lithography
- Citation
- SOLID-STATE ELECTRONICS, v.53, no.10, pp.1099 - 1102
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 53
- Number
- 10
- Start Page
- 1099
- End Page
- 1102
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/119224
- DOI
- 10.1016/j.sse.2009.05.007
- ISSN
- 0038-1101
- Abstract
- Various sized nano-patterns, ranging from 0.8 mu m x 0.4 mu m to 2.0 mu m x 1.0 mu m were formed on the p-GaN top cladding layer of green LED, in order to increase photon extraction efficiency by suppressing total internal reflection. Fabrication of nano-patterns was done by UV nanoimprint lithography and reactive ion etching of p-GaN using SiCl4 and At gases using SiO2 as an etch mask. The effect of various nano-patterns on top p-GaN layer was investigated by photoluminescence. Compared to LED structure without nano-patterns on top cladding layer, the LED structures with sub-micron sized nano-patterns exhibit up to four times stronger emission intensity. This implies that the photon extraction efficiency of LED structures was increased by nano-patterns on top p-GaN layer. However, the luminescence intensity of LED structures with patterns greater than a micron, was less increased. (C) 2009 Elsevier Ltd. All rights reserved.
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