N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals

Abstract

We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 degrees C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al2O3 layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm(2)/VS and an on/off current ratio of about 10(2). In addition, the electrical characteristics of the TFT on bent substrates are briefly described. (C) 2009 Elsevier B.V. All rights reserved.