Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas-solid reaction

Abstract

We grew Cu2S nanowires vertically on Cu foil by gas-solid reaction with a gas mixture of O-2 and H2S. The electrical contact properties between the Cu2S nanowires and Cu foil were investigated using a modified current-voltage-temperature plot. The Cu/Cu2S layer exhibited the characteristics of a Schottky barrier with a barrier height of similar to 0.72 eV, which was closer to the value for Cu/Cu2O than to Cu/Cu2S. Energy dispersive spectroscopy results showed the presence of Cu-oxide between the Cu2S nanowires and Cu foil. The overall structure was Cu/Cu-oxide/Cu2S and the electrical properties were controlled by the Cu/Cu-oxide. (C) 2008 Elsevier B.V. All rights reserved.