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Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas-solid reaction
- Issue Date
- 9월-2009
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Cu2S; Nanowire; Schottky
- Citation
- CURRENT APPLIED PHYSICS, v.9, no.5, pp.890 - 893
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 9
- Number
- 5
- Start Page
- 890
- End Page
- 893
- ISSN
- 1567-1739
- Abstract
- We grew Cu2S nanowires vertically on Cu foil by gas-solid reaction with a gas mixture of O-2 and H2S. The electrical contact properties between the Cu2S nanowires and Cu foil were investigated using a modified current-voltage-temperature plot. The Cu/Cu2S layer exhibited the characteristics of a Schottky barrier with a barrier height of similar to 0.72 eV, which was closer to the value for Cu/Cu2O than to Cu/Cu2S. Energy dispersive spectroscopy results showed the presence of Cu-oxide between the Cu2S nanowires and Cu foil. The overall structure was Cu/Cu-oxide/Cu2S and the electrical properties were controlled by the Cu/Cu-oxide. (C) 2008 Elsevier B.V. All rights reserved.
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