Low Temperature Fabrication of Residue-Free Polymer Patterns on Flexible Polymer Substrate
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Ki-Yeon | - |
dc.contributor.author | Yoon, Kyung-Min | - |
dc.contributor.author | Kim, Jong-Woo | - |
dc.contributor.author | Lee, Jong-Hwa | - |
dc.contributor.author | Lee, Heon | - |
dc.date.accessioned | 2021-09-08T14:00:52Z | - |
dc.date.available | 2021-09-08T14:00:52Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-09 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119418 | - |
dc.description.abstract | Low temperature imprinting on various substrates is essential for applying nanoimprint lithography (NIL) to the patterning process of large-area substrates with low thermal resistance. In addition, the imprinting resist must be distributed uniformly over a large area with near-zero residue imprinting to reduce the level of pattern damage during the residue removal process. In this study, thermal imprinting with a poly(benzyl methacrylate) (PBMA) resist, which can be coated uniformly over a large-area substrate by spin-coating and imprinted at low temperatures, was used to form micro- to nano-sized patterns. The PBMA patterns with a near-zero residual layer could be formed on the substrate using the partial-filling method. Using this imprinting technique, nano-sized PBMA patterns with a minimized residual layer were transferred to a Si wafer and poly(ethylene terephthalate) (PET) film with dimensions 50 x 50 mm(2). Metal patterns, as small as 70 nm, were fabricated on the substrate using this imprinting and lift-off process. (C) 2009 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | NANO-IMPRINTING LITHOGRAPHY | - |
dc.subject | WAFER-SCALE | - |
dc.subject | NANOIMPRINT | - |
dc.title | Low Temperature Fabrication of Residue-Free Polymer Patterns on Flexible Polymer Substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1143/JJAP.48.095003 | - |
dc.identifier.scopusid | 2-s2.0-77952716361 | - |
dc.identifier.wosid | 000270498300047 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.48, no.9 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 48 | - |
dc.citation.number | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NANO-IMPRINTING LITHOGRAPHY | - |
dc.subject.keywordPlus | WAFER-SCALE | - |
dc.subject.keywordPlus | NANOIMPRINT | - |
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