Effect of Magnetic Property Modification on Current-Induced Magnetization Switching with Perpendicular Magnetic Layers and Polarization-Enhancement Layers
- Authors
- Kim, Woojin; Lee, Kyung-Jin; Lee, Taek Dong
- Issue Date
- Sep-2009
- Publisher
- KOREAN MAGNETICS SOC
- Keywords
- current-induced magnetization switching; perpendicular magnetic anisotropy; micromagnetics; magnetic random access memory
- Citation
- JOURNAL OF MAGNETICS, v.14, no.3, pp 104 - 107
- Pages
- 4
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF MAGNETICS
- Volume
- 14
- Number
- 3
- Start Page
- 104
- End Page
- 107
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/119466
- DOI
- 10.4283/JMAG.2009.14.3.104
- ISSN
- 1226-1750
2233-6656
- Abstract
- The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromagnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization (M-s) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing M-s of PELs and decreasing interlayer exchange coupling.
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- Appears in
Collections - College of Engineering > ETC > 1. Journal Articles

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