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Effect of Magnetic Property Modification on Current-Induced Magnetization Switching with Perpendicular Magnetic Layers and Polarization-Enhancement Layers

Authors
Kim, WoojinLee, Kyung-JinLee, Taek Dong
Issue Date
9월-2009
Publisher
KOREAN MAGNETICS SOC
Keywords
current-induced magnetization switching; perpendicular magnetic anisotropy; micromagnetics; magnetic random access memory
Citation
JOURNAL OF MAGNETICS, v.14, no.3, pp.104 - 107
Indexed
SCIE
SCOPUS
KCI
Journal Title
JOURNAL OF MAGNETICS
Volume
14
Number
3
Start Page
104
End Page
107
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/119466
DOI
10.4283/JMAG.2009.14.3.104
ISSN
1226-1750
Abstract
The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromagnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization (M-s) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing M-s of PELs and decreasing interlayer exchange coupling.
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