Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method
DC Field | Value | Language |
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dc.contributor.author | Zhang, Ying | - |
dc.contributor.author | Seo, Hoon-Seok | - |
dc.contributor.author | An, Min-Jun | - |
dc.contributor.author | Choi, Jong-Ho | - |
dc.date.accessioned | 2021-09-08T15:04:24Z | - |
dc.date.available | 2021-09-08T15:04:24Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-08 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119551 | - |
dc.description.abstract | We present the first application of the neutral cluster beam deposition (NCBD) method to prepare n-type organic thin-film transistors with a top-contact structure based on N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13). Systematic analysis was carried out to examine the effects of surface passivation and thermal post-treatment on the morphology and crystallinity of P13 active layers and device performance, together with operational stability as a function of time. The high room-temperature field-effect mobility of 0.58 cm(2)/VS for the thermally post-treated devices was obtained under ambient conditions. The comparative study of the transport mechanisms responsible for conduction of the electron carriers over a temperature range of 10-300 K indicated that Surface modification and thermal post-treatment decrease total trap density and activation energy for carrier transport by reducing structural disorder. (C) 2009 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | TETRACARBOXYLIC DIIMIDE | - |
dc.subject | TEMPERATURE | - |
dc.subject | PERFORMANCE | - |
dc.subject | FABRICATION | - |
dc.subject | MOBILITY | - |
dc.subject | VOLTAGE | - |
dc.title | Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jong-Ho | - |
dc.identifier.doi | 10.1016/j.orgel.2009.04.017 | - |
dc.identifier.scopusid | 2-s2.0-67649343933 | - |
dc.identifier.wosid | 000268368400023 | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.10, no.5, pp.895 - 900 | - |
dc.relation.isPartOf | ORGANIC ELECTRONICS | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 895 | - |
dc.citation.endPage | 900 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | TETRACARBOXYLIC DIIMIDE | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordAuthor | Neutral cluster beam deposition (NCBD) | - |
dc.subject.keywordAuthor | n-Type field-effect transistors | - |
dc.subject.keywordAuthor | N,N &apos | - |
dc.subject.keywordAuthor | -Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) | - |
dc.subject.keywordAuthor | Hexamethyldisilazane (HMDS) | - |
dc.subject.keywordAuthor | Temperature-dependence of field-effect mobility | - |
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