Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method
- Authors
- Zhang, Ying; Seo, Hoon-Seok; An, Min-Jun; Choi, Jong-Ho
- Issue Date
- 8월-2009
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Neutral cluster beam deposition (NCBD); n-Type field-effect transistors; N,N ' -Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13); Hexamethyldisilazane (HMDS); Temperature-dependence of field-effect mobility
- Citation
- ORGANIC ELECTRONICS, v.10, no.5, pp.895 - 900
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 10
- Number
- 5
- Start Page
- 895
- End Page
- 900
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/119551
- DOI
- 10.1016/j.orgel.2009.04.017
- ISSN
- 1566-1199
- Abstract
- We present the first application of the neutral cluster beam deposition (NCBD) method to prepare n-type organic thin-film transistors with a top-contact structure based on N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13). Systematic analysis was carried out to examine the effects of surface passivation and thermal post-treatment on the morphology and crystallinity of P13 active layers and device performance, together with operational stability as a function of time. The high room-temperature field-effect mobility of 0.58 cm(2)/VS for the thermally post-treated devices was obtained under ambient conditions. The comparative study of the transport mechanisms responsible for conduction of the electron carriers over a temperature range of 10-300 K indicated that Surface modification and thermal post-treatment decrease total trap density and activation energy for carrier transport by reducing structural disorder. (C) 2009 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science > Department of Chemistry > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.