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Photoconductance of aligned SnO2 nanowire field effect transistors
- Authors
- Kim, Daell; Kim, Yong-Kwan; Park, Sung Chan; Ha, Jeong Sook; Huh, Junghwan; Na, Junhong; Kim, Gyu-Tae
- Issue Date
- 27-7월-2009
- Publisher
- AMER INST PHYSICS
- Keywords
- chemical vapour deposition; field effect transistors; nanoelectronics; nanofabrication; nanowires; photoconductivity; semiconductor materials; semiconductor quantum wires; tin compounds; ultraviolet detectors
- Citation
- APPLIED PHYSICS LETTERS, v.95, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 95
- Number
- 4
- ISSN
- 0003-6951
- Abstract
- We report on the optoelectronic properties of the aligned SnO2 nanowire (NW) field effect transistors (FETs) fabricated via a sliding transfer of NWs grown by chemical vapor deposition. Photocurrent measurements with polarized UV light confirmed a well aligned NWs along the channels. UV photosensitivity of similar to 10(7) at the gate voltage V-g=-40 V was obtained due to a small dark-current at the turn-off state of FET. The dynamic response of the photocurrent became faster for the higher mobility SnO2 NW FETs. We expect our aligned SnO2 NW FETs will be useful as polarized UV detectors with a high sensitivity.
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