Fabrication of Bismuth Telluride-Based Alloy Thin Film Thermoelectric Devices Grown by Metal Organic Chemical Vapor Deposition
DC Field | Value | Language |
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dc.contributor.author | Kwon, Sung-Do | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.contributor.author | Yoon, Seok-Jin | - |
dc.contributor.author | Kim, Jin-Sang | - |
dc.date.accessioned | 2021-09-08T15:43:49Z | - |
dc.date.available | 2021-09-08T15:43:49Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119723 | - |
dc.description.abstract | Bismuth-antimony-telluride based thin film materials were grown by metal organic vapor phase deposition (MOCVD). A planar-type thermoelectric device was fabricated with p-type Bi(0.4)Sb(1.6)Te(3) and n-type Bi(2)Te(3) thin films. The generator consisted of 20 pairs of p-type and n-type legs. We demonstrated complex structures of different conduction types of thermoelectric elements on the same substrate using two separate deposition runs of p-type and n-type thermoelectric materials. To demonstrate power generation, we heated one side of the sample with a heating block and measured the voltage output. An estimated power of 1.3 mu W was obtained for the temperature difference of 45 K. We provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials that may have a nanostructure with high thermoelectric properties. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | P-TYPE | - |
dc.subject | BI2TE3 | - |
dc.subject | SB2TE3 | - |
dc.subject | MOCVD | - |
dc.subject | COEVAPORATION | - |
dc.title | Fabrication of Bismuth Telluride-Based Alloy Thin Film Thermoelectric Devices Grown by Metal Organic Chemical Vapor Deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.identifier.doi | 10.1007/s11664-009-0704-8 | - |
dc.identifier.wosid | 000267662500003 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.38, no.7, pp.920 - 924 | - |
dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 38 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 920 | - |
dc.citation.endPage | 924 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | P-TYPE | - |
dc.subject.keywordPlus | BI2TE3 | - |
dc.subject.keywordPlus | SB2TE3 | - |
dc.subject.keywordPlus | MOCVD | - |
dc.subject.keywordPlus | COEVAPORATION | - |
dc.subject.keywordAuthor | Thin film | - |
dc.subject.keywordAuthor | thermoelectric | - |
dc.subject.keywordAuthor | generator | - |
dc.subject.keywordAuthor | Seebeck coefficient | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | bismuth telluride | - |
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