Fabrication of Bismuth Telluride-Based Alloy Thin Film Thermoelectric Devices Grown by Metal Organic Chemical Vapor Deposition
- Authors
- Kwon, Sung-Do; Ju, Byeong-Kwon; Yoon, Seok-Jin; Kim, Jin-Sang
- Issue Date
- 7월-2009
- Publisher
- SPRINGER
- Keywords
- Thin film; thermoelectric; generator; Seebeck coefficient; MOCVD; bismuth telluride
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.38, no.7, pp.920 - 924
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 38
- Number
- 7
- Start Page
- 920
- End Page
- 924
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/119723
- DOI
- 10.1007/s11664-009-0704-8
- ISSN
- 0361-5235
- Abstract
- Bismuth-antimony-telluride based thin film materials were grown by metal organic vapor phase deposition (MOCVD). A planar-type thermoelectric device was fabricated with p-type Bi(0.4)Sb(1.6)Te(3) and n-type Bi(2)Te(3) thin films. The generator consisted of 20 pairs of p-type and n-type legs. We demonstrated complex structures of different conduction types of thermoelectric elements on the same substrate using two separate deposition runs of p-type and n-type thermoelectric materials. To demonstrate power generation, we heated one side of the sample with a heating block and measured the voltage output. An estimated power of 1.3 mu W was obtained for the temperature difference of 45 K. We provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials that may have a nanostructure with high thermoelectric properties.
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