Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Electrical Transport Properties of Lambda Deoxyribonucleic Acid Films
- Authors
- Hwang, Jong-Seung; Hwang, Sung-Woo; Ahn, Doyeol
- Issue Date
- 7월-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Lambda DNA; Electrical transport; Field-effect transistor; Conduction
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.352 - 355
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 1
- Start Page
- 352
- End Page
- 355
- ISSN
- 0374-4884
- Abstract
- We have fabricated and characterized lambda deoxyribonucleic acid (DNA) field-effect transistor (FET) devices. Lambda DNA films were spin-coated between the source/drain metal electrodes, and the thickness was approximately 100 nm. The gate modulation of the FET devices exhibited nonlinear I-sd-V-sd, low I-sd depletion, and a small V-g dependence. The nonlinearity was mostly due to the contact potential between the DNA and the metal electrodes. The weak hole transport behavior of the lambda DNA was attributed to the most conductive guanine bases from the good mixture of adenine, thymine, guanine, and cytosine bases. Our results suggest that the lambda DNA films may have semiconducting characteristics.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.