Investigation of Simulated and Measured Program Characteristics in 4-bit/cell Charge-trap Flash (CTF) Memories
DC Field | Value | Language |
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dc.contributor.author | Kim, Jae Moo | - |
dc.contributor.author | Seo, Yu Jeong | - |
dc.contributor.author | An, Ho-Myoung | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.contributor.author | Park, Sung-Wook | - |
dc.contributor.author | Kim, Dae Hwan | - |
dc.date.accessioned | 2021-09-08T15:52:14Z | - |
dc.date.available | 2021-09-08T15:52:14Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119768 | - |
dc.description.abstract | We investigate the simulated and measured program characteristics for 4-bit program operations in silicon-oxide-nitride-oxide-silicon (SONOS) devices by using two-dimenhsional (2-D) device simulations. For this calculation, the width of the region with charge trapped locally in the drain region is assumed to be as narrow as 44 nm to remove second-bit effects during the 2-bit and 4-bit operation. We determine the reverse read voltage for screening bit-1 to be 2.5 V and confirm that both 2-bit and 4-bit; characteristics are successfully observed in our devices. From the threshold voltage shift, the densities of trapped charge, axe estimated to be 0 x 10(19), 3 x 10(19), 6 x 10(19) and 9 x 10(19) cm(-3) at 4-level states, respectively. We also find that these simulation results are reasonably consistent with the experimental results achieved in this work. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | DEVICE | - |
dc.title | Investigation of Simulated and Measured Program Characteristics in 4-bit/cell Charge-trap Flash (CTF) Memories | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.wosid | 000268023600080 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.367 - 371 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 55 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 367 | - |
dc.citation.endPage | 371 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001498399 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordAuthor | 4-bit-per-cell | - |
dc.subject.keywordAuthor | SONOS | - |
dc.subject.keywordAuthor | NROM (TM) | - |
dc.subject.keywordAuthor | Localized trapped charge | - |
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