Reduction of the Gate Leakage Current in Binary-trench-insulated Gate AlGaN/GaN High-electron-mobility Transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Su Jin | - |
dc.contributor.author | Kim, Doug Ho | - |
dc.contributor.author | Kim, Jae Moo | - |
dc.contributor.author | Jung, Kang Min | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.contributor.author | Choi, Hong Goo | - |
dc.contributor.author | Hahn, Cheol-Koo | - |
dc.date.accessioned | 2021-09-08T15:52:35Z | - |
dc.date.available | 2021-09-08T15:52:35Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/119770 | - |
dc.description.abstract | We propose a binary-trench-insulated (BTI) gate structure for reducing the gate leakage current without sacrifice of the transconductance in GaN high-electron-mobility transistors (HEMTs), and its physics-based simulation results are compared with conventional GaN HEMTs and metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMTs) with Si3N4 insulators. The gate insulator of AlGaN/GaN BTI-HEMTs consists of two laterally contacting materials with different dielectric constants. The two parallel trench-insulators are composed of oxide and high-k dielectric materials of the same thickness and located within the AlGaN barrier layer. Simulation results clearly indicate that the gate leakage current in the proposed BTI-HEMT is significantly decreased by about two and six orders of magnitude compared to that of the conventional HEMT and MIS-HEMTs. In addition, we observe approximately 57.7% and 15.6% improvements in the maximum drain current density (I-D,I-max) and 40.8% and 65.4% improvements in the maximum transconductance (g(m,max)) at zero gate bias condition, respectively, as compared to those of the conventional-HEMTs and MIS-HEMTs. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | GAN-ALGAN | - |
dc.subject | HEMTS | - |
dc.subject | SIMULATION | - |
dc.subject | OPERATION | - |
dc.subject | ENHANCEMENT | - |
dc.subject | MOSHFETS | - |
dc.subject | ALN | - |
dc.subject | DC | - |
dc.title | Reduction of the Gate Leakage Current in Binary-trench-insulated Gate AlGaN/GaN High-electron-mobility Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.scopusid | 2-s2.0-69249200535 | - |
dc.identifier.wosid | 000268023600078 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.356 - 361 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 55 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 356 | - |
dc.citation.endPage | 361 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001498397 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | GAN-ALGAN | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | MOSHFETS | - |
dc.subject.keywordPlus | ALN | - |
dc.subject.keywordPlus | DC | - |
dc.subject.keywordAuthor | Gallium nitride (GaN) | - |
dc.subject.keywordAuthor | AlGaN/GaN HEMT | - |
dc.subject.keywordAuthor | Binary-trench-insulated (BTI) gate | - |
dc.subject.keywordAuthor | Gate leakage | - |
dc.subject.keywordAuthor | MIS | - |
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