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A stiff and flat membrane operated DC contact type RF MEMS switch with low actuation voltage

Authors
Kim, JongseokKwon, SangwookJeong, HeemoonHong, YoungtackLee, SanghunSong, InsangJu, Byeongkwon
Issue Date
25-6월-2009
Publisher
ELSEVIER SCIENCE SA
Keywords
RF switch; Stiff membrane; Variable seesaw
Citation
SENSORS AND ACTUATORS A-PHYSICAL, v.153, no.1, pp.114 - 119
Indexed
SCIE
SCOPUS
Journal Title
SENSORS AND ACTUATORS A-PHYSICAL
Volume
153
Number
1
Start Page
114
End Page
119
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/119810
DOI
10.1016/j.sna.2009.04.002
ISSN
0924-4247
Abstract
RF MEMS switches can be divided into electrostatic, magnetic, thermal, and piezoelectric types by their actuation mechanisms. Most research has focused on the electrostatic actuation types because of these types low power consumption, simple fabrication method, and good RF characteristics. However, these types of switches operate at high voltages compared with the other types. One of the main problems that affect the operation voltages is the bending of the membrane due to an internal stress gradient. To solve this problem. a thick and stiff membrane operated RF MEMS switch has been developed and is presented in this paper. This membrane consists of a flexible spring for an up-down actuation mode at low voltage and a pivot tinder the membrane for a seesaw mode on-off switch operation. This novel RF MEMS switch has been fabricated, and its RF characteristics measured. The minimum actuation voltage is approximately 10-12 V, the isolation approximately -50 dB, and the insertion loss is approximately -0.25 dB at 2 GHz, respectively. The bending range of the membrane has been measured by using an optical 3D profiler and the height is within 0.2 mu m across the 800 mu m length membrane. This bending range is uniform across all samples of an entire 4 in. wafer. (C) 2009 Elsevier B.V. All rights reserved.
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Ju, Byeong kwon
공과대학 (전기전자공학부)
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