Effects of intrinsic ZnO buffer layer based on P3HT/PCBM organic solar cells with Al-doped ZnO electrode
- Authors
- Park, Sungeun; Tark, Sung Ju; Lee, Joon Sung; Lim, Heejin; Kim, Donghwan
- Issue Date
- Jun-2009
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Organic solar cells; ZnO; Intrinsic ZnO; Shunt resistance
- Citation
- SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.93, no.6-7, pp 1020 - 1023
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLAR ENERGY MATERIALS AND SOLAR CELLS
- Volume
- 93
- Number
- 6-7
- Start Page
- 1020
- End Page
- 1023
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/119854
- DOI
- 10.1016/j.solmat.2008.11.033
- ISSN
- 0927-0248
1879-3398
- Abstract
- Organic solar cell devices were fabricated using poly(3-hexylthiophene) (P3HT) and 6,6-phenyl C61-butyric acid methyl ester (PCBM), which play the role of an electron donor and acceptor, respectively. The transparent electrode of organic solar cells, indium tin oxide (ITO), was replaced by Al-doped ZnO (AZO). ZnO has been studied extensively in recent years on account of its high optical transmittance, electrical conduction and low material cost. This paper reports organic solar cells based on AI-doped ZnO as an alternative to ITO. Organic solar cells with intrinsic ZnO inserted between the P3HT/PCBM layer and AZO were also fabricated. The intrinsic ZnO layer prevented the shunt path in the device. The performance of the cells with a layer of intrinsic ZnO was superior to that without the intrinsic ZnO layer. (C) 2008 Elsevier B.V. All rights reserved.
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