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Effects of intrinsic ZnO buffer layer based on P3HT/PCBM organic solar cells with Al-doped ZnO electrode

Authors
Park, SungeunTark, Sung JuLee, Joon SungLim, HeejinKim, Donghwan
Issue Date
6월-2009
Publisher
ELSEVIER SCIENCE BV
Keywords
Organic solar cells; ZnO; Intrinsic ZnO; Shunt resistance
Citation
SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.93, no.6-7, pp.1020 - 1023
Indexed
SCIE
SCOPUS
Journal Title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume
93
Number
6-7
Start Page
1020
End Page
1023
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/119854
DOI
10.1016/j.solmat.2008.11.033
ISSN
0927-0248
Abstract
Organic solar cell devices were fabricated using poly(3-hexylthiophene) (P3HT) and 6,6-phenyl C61-butyric acid methyl ester (PCBM), which play the role of an electron donor and acceptor, respectively. The transparent electrode of organic solar cells, indium tin oxide (ITO), was replaced by Al-doped ZnO (AZO). ZnO has been studied extensively in recent years on account of its high optical transmittance, electrical conduction and low material cost. This paper reports organic solar cells based on AI-doped ZnO as an alternative to ITO. Organic solar cells with intrinsic ZnO inserted between the P3HT/PCBM layer and AZO were also fabricated. The intrinsic ZnO layer prevented the shunt path in the device. The performance of the cells with a layer of intrinsic ZnO was superior to that without the intrinsic ZnO layer. (C) 2008 Elsevier B.V. All rights reserved.
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KIM, Dong hwan
공과대학 (신소재공학부)
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