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Fabrication of Fe3O4 Thin Film using Reactive DC Magnetron Sputtering
- Issue Date
- 6월-2009
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- Fe3O4 film; half metallic reactive sputtering
- Citation
- JOURNAL OF THE KOREAN INSTITUTE OF METALS AND MATERIALS, v.47, no.6, pp.378 - 382
- Indexed
- SCIE
SCOPUS
KCI
- Volume
- 47
- Number
- 6
- Start Page
- 378
- End Page
- 382
- ISSN
- 1738-8228
- Abstract
- We investigated the effects of deposition conditions on the fabrication of Fe3O4 thin films using a reactive DC magnetron sputtering at room temperature. The structural, electrical, and magnetic properties of Fe oxide films dependence on the film thickness, oxygen flow rate, and the substrate crystallinity were also studied. We have successfully fabricated Fe3O4 film with thickness of about 10 nm under optimal reactive sputtering conditions. The saturation magnetization, resistivity, and Verwey transition of the Fe3O4 film were 298 emu/cc, 4.0x10(-2) Omega cm, and 125 K, respectively.
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