Nature of luminescence and strain in gallium nitride nanowires
- Authors
- Mastro, M. A.; Maximenko, S.; Gowda, M.; Simpkins, B. S.; Pehrsson, P. E.; Long, J. P.; Makinen, A. J.; Freitas, J. A., Jr.; Hite, J. K.; Eddy, C. R., Jr.; Kim, J.
- Issue Date
- 1-5월-2009
- Publisher
- ELSEVIER
- Keywords
- Stresses; Gallium compounds; Nanomaterials; Semiconducting gallium compounds
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.311, no.10, pp.2982 - 2986
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 311
- Number
- 10
- Start Page
- 2982
- End Page
- 2986
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/120066
- DOI
- 10.1016/j.jcrysgro.2009.01.053
- ISSN
- 0022-0248
- Abstract
- Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution between 350 nm and 850 nm. Spectral analysis indicated that wires with a diameter less than 400 nm were dominated by a yellow luminescence with a weaker near UV/violet emission also present. Examination of this ensemble showed that there was a general trend in the ratio of near-UV-to-yellow emission intensities with increasing nanowire diameter. Additionally, a broad green emission appears in the nanowires with a diameter above approximately 200 nm. A calculation based on the nanoheteroepitaxy model indicates that this diameter represents a transitional thickness where strain is relieved by defect formation mechanisms with a characteristic green emission. Published by Elsevier B.V.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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