Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Electrical transport properties of a single wall carbon nanotube network
- Authors
- Hwang, J. S.; Kim, H. T.; Kim, H. K.; Son, M. H.; Hwang, S. W.; Ahn, D.
- Issue Date
- 4월-2009
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.246, no.4, pp.744 - 746
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Volume
- 246
- Number
- 4
- Start Page
- 744
- End Page
- 746
- ISSN
- 0370-1972
- Abstract
- A single wall carbon nanotube (SWCNT) network is fabricated and its electronic transport properties are investigated. It shows a typical p-type field-effect-transistor (FET) behavior and nonlinearities in the source current-source bias characteristics. The network also exhibits incomplete turn-off and a small mobility. These characteristics are explained by the fact that the network is a mixture of metallic and semiconducting SWCNTs connecting with one another. Various cross junctions such as SWCNT (semiconducting) SWCNT (metallic) are the source of nonlinearities and the small mobility. Incomplete turn-off can be explained by the parallel conduction paths consisting of metallic SWCNTs which are insensitive to the gate bias. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.