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Electrical Characteristics of Metal Contacts to Laser-Irradiated N-Polar n-Type GaN
- Authors
- Kim, Hyunsoo; Ryou, Jae-Hyun; Dupuis, Russell D.; Jang, Taesung; Park, Yongjo; Lee, Sung-Nam; Seong, Tae-Yeon
- Issue Date
- 4월-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Contact; GaN; N-polar; Schottky barrier heights (SBHs)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.30, no.4, pp.319 - 321
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 30
- Number
- 4
- Start Page
- 319
- End Page
- 321
- ISSN
- 0741-3106
- Abstract
- Electrical characteristics of metal contacts to a laser-irradiated thin-film N-polar n-type GaN surface are investigated. It is shown that the laser irradiation of the N-polar n-GaN results In a significant Increase (as high as 3.0 x 10(20) cm(-3)) In the electron concentration and a decrease In the Schottky barrier height by 0.05 eV (0.28 eV), as estimated using Pt-based Schottky diodes (X-ray photoemission spectroscopy). Ti/Al contacts to the laser-irradiated N-polar sample exhibit an excellent Ohmic behavior with thermal stability up to 600 degrees C, indicating that the laser irradiation treatment can be a very promising technology in practical applications.
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