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Electrical Characteristics of Metal Contacts to Laser-Irradiated N-Polar n-Type GaN

Authors
Kim, HyunsooRyou, Jae-HyunDupuis, Russell D.Jang, TaesungPark, YongjoLee, Sung-NamSeong, Tae-Yeon
Issue Date
Apr-2009
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Contact; GaN; N-polar; Schottky barrier heights (SBHs)
Citation
IEEE ELECTRON DEVICE LETTERS, v.30, no.4, pp.319 - 321
Indexed
SCIE
SCOPUS
Journal Title
IEEE ELECTRON DEVICE LETTERS
Volume
30
Number
4
Start Page
319
End Page
321
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/120347
DOI
10.1109/LED.2009.2013486
ISSN
0741-3106
Abstract
Electrical characteristics of metal contacts to a laser-irradiated thin-film N-polar n-type GaN surface are investigated. It is shown that the laser irradiation of the N-polar n-GaN results In a significant Increase (as high as 3.0 x 10(20) cm(-3)) In the electron concentration and a decrease In the Schottky barrier height by 0.05 eV (0.28 eV), as estimated using Pt-based Schottky diodes (X-ray photoemission spectroscopy). Ti/Al contacts to the laser-irradiated N-polar sample exhibit an excellent Ohmic behavior with thermal stability up to 600 degrees C, indicating that the laser irradiation treatment can be a very promising technology in practical applications.
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