A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl) pentacene and a methyl-siloxane-based dielectric
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, Jae-Hong | - |
dc.contributor.author | Shin, Sang-Il | - |
dc.contributor.author | Choi, Jinnil | - |
dc.contributor.author | Chung, Myung-Ho | - |
dc.contributor.author | Kang, Hochul | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.date.accessioned | 2021-09-08T19:17:45Z | - |
dc.date.available | 2021-09-08T19:17:45Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2009-03 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/120475 | - |
dc.description.abstract | In this paper, we describe our fabrication of a solution-processed organic thin-film transistor (OTFT) with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as the organic semiconductor (OSC) and methyl-siloxane-based spin-on glass (SOG) as the inorganic gate dielectric. Also, we compare these results with OTFTs using different substrates such as a silicon wafer or a polyethersulfone (PES) substrate. From electrical measurements, we observed exemplary I-V characteristics for these TFTs. We calculated the field effect mobility to be 0.007 cm(2)/V s for an OTFT fabricated on a wafer and 0.004 cm(2)/V s for an OTFT fabricated on a PES substrate. Crown Copyright (C) 2008 Published by Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | LOW-K | - |
dc.subject | DERIVATIVES | - |
dc.subject | DISPLAYS | - |
dc.title | A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl) pentacene and a methyl-siloxane-based dielectric | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.identifier.doi | 10.1016/j.sse.2008.12.002 | - |
dc.identifier.scopusid | 2-s2.0-61349191531 | - |
dc.identifier.wosid | 000264731300003 | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.53, no.3, pp.266 - 270 | - |
dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 53 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 266 | - |
dc.citation.endPage | 270 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | LOW-K | - |
dc.subject.keywordPlus | DERIVATIVES | - |
dc.subject.keywordPlus | DISPLAYS | - |
dc.subject.keywordAuthor | Organic thin-film transistor | - |
dc.subject.keywordAuthor | 6,13-Bis(triisopropylsilylethynyl)pentacene | - |
dc.subject.keywordAuthor | Methyl-siloxane-based spin-on glass | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.