A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl) pentacene and a methyl-siloxane-based dielectric
- Authors
- Kwon, Jae-Hong; Shin, Sang-Il; Choi, Jinnil; Chung, Myung-Ho; Kang, Hochul; Ju, Byeong-Kwon
- Issue Date
- 3월-2009
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Organic thin-film transistor; 6,13-Bis(triisopropylsilylethynyl)pentacene; Methyl-siloxane-based spin-on glass
- Citation
- SOLID-STATE ELECTRONICS, v.53, no.3, pp.266 - 270
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 53
- Number
- 3
- Start Page
- 266
- End Page
- 270
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/120475
- DOI
- 10.1016/j.sse.2008.12.002
- ISSN
- 0038-1101
- Abstract
- In this paper, we describe our fabrication of a solution-processed organic thin-film transistor (OTFT) with 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as the organic semiconductor (OSC) and methyl-siloxane-based spin-on glass (SOG) as the inorganic gate dielectric. Also, we compare these results with OTFTs using different substrates such as a silicon wafer or a polyethersulfone (PES) substrate. From electrical measurements, we observed exemplary I-V characteristics for these TFTs. We calculated the field effect mobility to be 0.007 cm(2)/V s for an OTFT fabricated on a wafer and 0.004 cm(2)/V s for an OTFT fabricated on a PES substrate. Crown Copyright (C) 2008 Published by Elsevier Ltd. All rights reserved.
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