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Structural and Electrical Properties of (1-x)Bi5Nb3O15-xBi(4)Ti(3)O(12) Ceramics and 0.96Bi(5)Nb(3)O(15)-0.04Bi(4)Ti(3)O(12) Thin Films Grown by Pulsed Laser Deposition

Authors
Song, Myung-EunSeong, Tae-GeunKim, Jin-SeongCho, Kyung-HoonSun, Jong-WooNahm, Sahn
Issue Date
Mar-2009
Publisher
KOREAN INST METALS MATERIALS
Keywords
0.96Bi(5)Nb(3)O(15)-0.04Bi(4)Ti(3)O(12) film; low process temperature; dielectric constant; oxygen pressure
Citation
ELECTRONIC MATERIALS LETTERS, v.5, no.1, pp.23 - 27
Indexed
SCIE
SCOPUS
KCI
OTHER
Journal Title
ELECTRONIC MATERIALS LETTERS
Volume
5
Number
1
Start Page
23
End Page
27
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/120499
DOI
10.3365/eml.2009.03.023
ISSN
1738-8090
Abstract
A 0.96Bi(5)Nb(3)O(15)-0.04Bi(4)Ti(3)O(12) (0.96B(5)N(3)-0.04B(4)T(3)) ceramic showed a high dielectric constant (k) of 314, probably due to the increased dipole moment caused by the replacement of Nb5+ ions by Ti4+ ions. The 0.96B(5)N(3)-0.04B(4)T(3) films, were well formed on the Pt/Ti/SiO2/Si substrate. Films grown at temperatures lower than 400 degrees C had an amorphous phase but small Bi3NbO7 crystals were considered to have been formed in these. films. The film grown at 300 degrees C exhibited a high k value of 83 with a low dielectric loss of 0.5%. The leakage current density of the film grown at low oxygen pressure (OP) was high and decreased with increasing OP to a minimum at an OP of 200 mTorr, after which it increased with further increase in OP. This variation of the leakage current density with OP was explained by the existence of oxygen vacancies and interstitial oxygen ions in the film. The 0.96B(5)N(3)-0.04B(4)T(3) film 2 grown under 200 mTorr OP exhibited a high k value of 83, a low leakage current density of 8 x 10(-8) A/cm(2) at 0.3 MV/cm and a high breakdown field of 0.4 MV/cm.
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