Electrical Characteristics of Floating-Gate Memory Devices with Titanium Nanoparticles Embedded in Gate Oxides
DC Field | Value | Language |
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dc.contributor.author | Park, Byoungjun | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Yun, Junggwon | - |
dc.contributor.author | Koo, Yong-Seo | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-08T19:33:19Z | - |
dc.date.available | 2021-09-08T19:33:19Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-03 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/120550 | - |
dc.description.abstract | The electrical characteristics of titanium (Ti) nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors and metal-oxide-semiconductor field effect transistors (MOSFETs) with blocking Al2O3 layers are studied in this work. Ti nanoparticles were synthesized by a thermal deposition of Ti and by a subsequent thermal annealing procedure. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor embedded with Ti nanoparticles exhibit large flat-band voltage shifts, demonstrating the presence of charge storages in the Ti nanoparticles. The counterclockwise hysteresis and flat-band voltage shift observed from the C-V curves imply that electrons are stored in a floating gate layer consisting of the Ti nanoparticles present between the tunneling oxide and control oxide layers in the MOS capacitor and that these stored electrons originate from the p-type Si substrate in inversion condition. Moreover, the source/drain current versus gate voltage curves for the Ti nanoparticle-embedded MOSFETs and the threshold voltage shift characteristics of program/erase time, endurance and retention are analyzed in this paper. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | METAL NANOCRYSTAL MEMORIES | - |
dc.subject | CHARGE STORAGE | - |
dc.subject | FABRICATION | - |
dc.subject | CAPACITOR | - |
dc.subject | VARIOT | - |
dc.title | Electrical Characteristics of Floating-Gate Memory Devices with Titanium Nanoparticles Embedded in Gate Oxides | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1166/jnn.2009.438 | - |
dc.identifier.wosid | 000263653400036 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.9, no.3, pp.1904 - 1908 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 9 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1904 | - |
dc.citation.endPage | 1908 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | METAL NANOCRYSTAL MEMORIES | - |
dc.subject.keywordPlus | CHARGE STORAGE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | CAPACITOR | - |
dc.subject.keywordPlus | VARIOT | - |
dc.subject.keywordAuthor | Titanium | - |
dc.subject.keywordAuthor | Nanoparticles | - |
dc.subject.keywordAuthor | Memory | - |
dc.subject.keywordAuthor | Al2O3 | - |
dc.subject.keywordAuthor | High-k | - |
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