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Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays
- Authors
- Kim, B. J.; Jung, H.; Shin, J.; Mastro, M. A.; Eddy, C. R., Jr.; Hite, J. K.; Kim, S. H.; Bang, J.; Kim, J.
- Issue Date
- 27-Feb-2009
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Light emitting diode; Light extraction efficiency; Nanosphere arrays
- Citation
- THIN SOLID FILMS, v.517, no.8, pp.2742 - 2744
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 517
- Number
- 8
- Start Page
- 2742
- End Page
- 2744
- ISSN
- 0040-6090
- Abstract
- Here we introduce a simple and robust method to improve the light extraction efficiency of ultraviolet light emitting diodes (UV LEDs). Although many previous efforts have focused on etching the GaN surfaces, we employed a simple solution process to texture the GaN surface. Arrays of SiO2 nanosphere monolayers were spun cast onto a polymer layer. consisting of benzocyclobutene (BCB) resins: subsequently, the bottom half of the SiO2 nanospheres sunk into the BCB layer. The resulting array formed in a hexagonal-like pattern of 'nano-lenses' and the photoluminescence measurement exhibited that these patterns enhanced the light extracting efficiency of UV LEDs by 23%. (C) 2008 Elsevier B.V. All rights reserved.
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