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Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays

Authors
Kim, B. J.Jung, H.Shin, J.Mastro, M. A.Eddy, C. R., Jr.Hite, J. K.Kim, S. H.Bang, J.Kim, J.
Issue Date
27-Feb-2009
Publisher
ELSEVIER SCIENCE SA
Keywords
Light emitting diode; Light extraction efficiency; Nanosphere arrays
Citation
THIN SOLID FILMS, v.517, no.8, pp.2742 - 2744
Indexed
SCIE
SCOPUS
Journal Title
THIN SOLID FILMS
Volume
517
Number
8
Start Page
2742
End Page
2744
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/120557
DOI
10.1016/j.tsf.2008.11.067
ISSN
0040-6090
Abstract
Here we introduce a simple and robust method to improve the light extraction efficiency of ultraviolet light emitting diodes (UV LEDs). Although many previous efforts have focused on etching the GaN surfaces, we employed a simple solution process to texture the GaN surface. Arrays of SiO2 nanosphere monolayers were spun cast onto a polymer layer. consisting of benzocyclobutene (BCB) resins: subsequently, the bottom half of the SiO2 nanospheres sunk into the BCB layer. The resulting array formed in a hexagonal-like pattern of 'nano-lenses' and the photoluminescence measurement exhibited that these patterns enhanced the light extracting efficiency of UV LEDs by 23%. (C) 2008 Elsevier B.V. All rights reserved.
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