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A pn heterojunction diode constructed with a n-type ZnO nanowire and a p-type HgTe nanoparticle thin film

Authors
Seong, HojunCho, KyoungahKim, Sangsig
Issue Date
26-1월-2009
Publisher
AMER INST PHYSICS
Keywords
dark conductivity; elemental semiconductors; II-VI semiconductors; mercury compounds; nanoparticles; ohmic contacts; photoconductivity; p-n heterojunctions; semiconductor quantum wires; semiconductor thin films; silicon; wide band gap semiconductors; zinc compounds
Citation
APPLIED PHYSICS LETTERS, v.94, no.4
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
94
Number
4
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/120734
DOI
10.1063/1.3067861
ISSN
0003-6951
Abstract
We demonstrate a pn heterojunction diode constructed with a n-type ZnO nanowire (NW) and a p-type HgTe nanoparticle (NP) thin film on a SiO2/p-Si substrate. For the pn heterojunction diode, the rectifying characteristics of both the dark current and the photocurrent excited by 633 nm wavelength light were observed, but the photocurrent excited by 325 nm wavelength light possesses Ohmic characteristics. The optoelectronic characteristics of the pn heterojunction diode were compared with those of the ZnO NW and HgTe NP thin film composing it.
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공과대학 (전기전자공학부)
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