Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
ZnO nanowire field-effect transistor as a UV photodetector; optimization for maximum sensitivity
- Authors
- Kim, Woong; Chu, Kyo Seon
- Issue Date
- 1월-2009
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.206, no.1, pp.179 - 182
- Indexed
- SCIE
SCOPUS
- Volume
- 206
- Number
- 1
- Start Page
- 179
- End Page
- 182
- ISSN
- 1862-6300
- Abstract
- We demonstrate that drain-source (V(ds)) and gate-source voltages (V(gs)) of a zinc oxide nanowire (ZnO NW) field-effect transistor (FET) can be optimized to increase UV photodetection sensitivity. Investigation of the relationship between the sensitivity and the applied voltages reveals that the photodetector is most sensitive when it operates (1) with highest on/off current ratio and (2) at the "bottom" of the subthreshold swing region. Our results can be broadly applied to maximize sensitivity of other FET-based sensors and detectors. A ZnO NW photodetector is most sensitive when V(gs) is positioned at the "bottom" of the subthreshold swing region.0 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.