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Thermal Modeling of Graphene Layer on the Peak Channel Temperature of AlGaN/GaN High Electron Mobility Transistors

Authors
Ko, GeunwooKim, Jihyun
Issue Date
2009
Publisher
ELECTROCHEMICAL SOC INC
Keywords
aluminium compounds; carbon; gallium compounds; high electron mobility transistors; III-V semiconductors; reliability; sapphire; silicon compounds; wide band gap semiconductors
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.2, pp.H29 - H31
Indexed
SCIE
SCOPUS
Journal Title
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume
12
Number
2
Start Page
H29
End Page
H31
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/120934
DOI
10.1149/1.3023032
ISSN
1099-0062
Abstract
We report that the deposition of graphene as a heat spreading layer on AlGaN/GaN/sapphire high electron mobility transistors (HEMT) can lower the temperature of localized hot spots, which can reach as high as 300 degrees C. As the number of gate fingers increased, the peak channel temperature also increased. From our simulation, graphene was shown to be extremely effective in distributing the localized heat in both SiC and sapphire substrates. The reliability of AlGaN/GaN HEMT can be remarkably improved by using a graphene layer because it can act as a heat-spreading layer and lower the temperature of localized hot spots, which are known to limit device performance and activate the formation of defects.
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