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Hysteresis Effects by Source/Drain Interdigitated-Finger Geometry in 6,13-Bis(triisopropylsilylethynyl)pentacene Thin-Film Transistors

Authors
Kwon, Jae-HongShin, Sang-IlChoi, JinnilChung, Myung-HoRyu, HyeyeonZschieschang, UteKlauk, HagenAnthony, John E.Ju, Byeong-Kwon
Issue Date
2009
Publisher
ELECTROCHEMICAL SOC INC
Keywords
dielectric materials; electron mobility; organic field effect transistors; semiconductor materials; thin film transistors
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.H285 - H287
Indexed
SCIE
SCOPUS
Journal Title
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume
12
Number
8
Start Page
H285
End Page
H287
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/120962
DOI
10.1149/1.3131744
ISSN
1099-0062
Abstract
This work reports on the fabrication of organic thin-film transistors (OTFTs) with a solution-based 6,13-bis(triisopropylsilylethynyl)pentacene by a drop-casting method, and the determination of the electrical properties of OTFTs having different source/drain interdigitated-finger electrodes. The results show that the hysteresis in transfer characteristics of the OTFTs depends on the variation of contact fingers. These hystereses lead to changes in threshold voltage, which originates from charge trapping/detrapping at or near the organic semiconductor/dielectric interface. These related phenomena also influence the device parameters such as the field-effect mobility, the on/off current ratio, and the gate current.
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