Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Etching Mechanism of Indium Tin Oxide Thin Films using Cl2/HBr Inductively Coupled PlasmaEtching Mechanism of Indium Tin Oxide Thin Films using Cl2/HBr Inductively Coupled Plasma
- Other Titles
- Etching Mechanism of Indium Tin Oxide Thin Films using Cl2/HBr Inductively Coupled Plasma
- Issue Date
- 2009
- Publisher
- 한국전기전자재료학회
- Keywords
- Cl2/HBr; ICP; ITO; QMS; Langmuir probe system
- Citation
- Transactions on Electrical and Electronic Materials, v.10, no.1, pp.1 - 4
- Indexed
- KCI
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 10
- Number
- 1
- Start Page
- 1
- End Page
- 4
- ISSN
- 1229-7607
- Abstract
- Dry etching characteristics of indium tin oxide films and etch selectivities over photoresist films were investigated using Cl2/HBr inductively coupled plasma. From a Langmuir probe diagnostic system, it was observed that while the plasma temperature was kept nearly constant in spite of the change of the HBr mixing ratio, the positive ion density decreases rapidly with increasing the mixing ratio. On the other hand, a quadrupole mass spectrometer showed that the neutral HBr and Br species increased. The etching mechanism in the HBr/Cl2 plasma was analyzed.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.