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Composition-Dependent Structural and Electrical Properties of ZrxTiyO2 Films Grown on RuO2 Substrate by ALD
- Authors
- Kwon, Hyuk; Park, Hyun-Hee; Kim, Byong-Ho; Ha, Jeong Sook
- Issue Date
- 2009
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- amorphous state; annealing; atomic layer deposition; current density; electrical conductivity; high-k dielectric thin films; leakage currents; permittivity; titanium compounds; zirconium compounds
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.2, pp.G13 - G16
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 156
- Number
- 2
- Start Page
- G13
- End Page
- G16
- ISSN
- 0013-4651
- Abstract
- We have investigated the structural and electrical properties of ZrxTiyO2 films grown on a RuO2 substrate by atomic layer deposition (ALD) with a variation of the ALD cycle ratio of ZrO2/[ZrO2+TiO2], RZr/[Zr+Ti]. TiO2 films (15 nm thick) grown at 225 degrees C using water as an oxygen source showed a rutile structure and a dielectric constant of 90 after postannealing at 600 degrees C. With an increase of RZr/[Zr+Ti] to 0.50, the leakage current density of 15 nm thick ZrxTiyO2 films grown at 225 degrees C was improved to be 1.2x10(-6) A/cm(2), but the dielectric constant decreased to 20. This is attributed to the destruction of rutile TiO2 structures into amorphous ZrxTiyO2 phase by the increase of Zr content.
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