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Composition-Dependent Structural and Electrical Properties of ZrxTiyO2 Films Grown on RuO2 Substrate by ALD

Authors
Kwon, HyukPark, Hyun-HeeKim, Byong-HoHa, Jeong Sook
Issue Date
2009
Publisher
ELECTROCHEMICAL SOC INC
Keywords
amorphous state; annealing; atomic layer deposition; current density; electrical conductivity; high-k dielectric thin films; leakage currents; permittivity; titanium compounds; zirconium compounds
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.2, pp.G13 - G16
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume
156
Number
2
Start Page
G13
End Page
G16
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/122148
DOI
10.1149/1.3033500
ISSN
0013-4651
Abstract
We have investigated the structural and electrical properties of ZrxTiyO2 films grown on a RuO2 substrate by atomic layer deposition (ALD) with a variation of the ALD cycle ratio of ZrO2/[ZrO2+TiO2], RZr/[Zr+Ti]. TiO2 films (15 nm thick) grown at 225 degrees C using water as an oxygen source showed a rutile structure and a dielectric constant of 90 after postannealing at 600 degrees C. With an increase of RZr/[Zr+Ti] to 0.50, the leakage current density of 15 nm thick ZrxTiyO2 films grown at 225 degrees C was improved to be 1.2x10(-6) A/cm(2), but the dielectric constant decreased to 20. This is attributed to the destruction of rutile TiO2 structures into amorphous ZrxTiyO2 phase by the increase of Zr content.
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Ha, Jeong Sook
공과대학 (화공생명공학과)
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