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Improvement of Grain-Boundary Conduction in SiO2-Doped GDC by BaO Addition
- Issue Date
- 2009
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- barium compounds; doping; electron probe analysis; gadolinium compounds; grain boundaries; silicon compounds; surface conductivity; transmission electron microscopy
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.8, pp.B891 - B896
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 156
- Number
- 8
- Start Page
- B891
- End Page
- B896
- ISSN
- 0013-4651
- Abstract
- Barium oxide (BaO) was suggested as a scavenger material to mitigate the harmful siliceous intergranular phase in gadolinia-doped ceria (GDC). The addition of 1-5 mol % BaO to GDC specimens containing 500 ppm SiO2 enhanced the grain-boundary conduction by similar to 250 times. Transmission electron microscopy and electron probe microanalysis attributed this enhancement to the scavenging of the siliceous phase by the Ba-rich phase. In contrast, the grain-boundary conduction was significantly deteriorated when doped with 0.1-0.2 mol % BaO, which was attributed to the dissolution of BaO into the intergranular phase and the consequent increase in the ion-blocking effect at the grain boundary.
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