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Gas sensing properties of defect-controlled ZnO-nanowire gas sensor
- Authors
- Ahn, M. -W.; Park, K. -S.; Heo, J. -H.; Park, J. -G.; Kim, D. -W.; Choi, K. J.; Lee, J. -H.; Hong, S. -H.
- Issue Date
- 29-12월-2008
- Publisher
- AMER INST PHYSICS
- Keywords
- adsorption; annealing; catalysts; gas sensors; gold; II-VI semiconductors; nanotechnology; nanowires; photoluminescence; vacancies (crystal); wide band gap semiconductors; zinc compounds
- Citation
- APPLIED PHYSICS LETTERS, v.93, no.26
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 93
- Number
- 26
- ISSN
- 0003-6951
- Abstract
- The effect of oxygen-vacancy-related defects on gas-sensing properties of ZnO-nanowire gas sensors was investigated. Gas sensors were fabricated by growing ZnO nanowires bridging the gap between two prepatterned Au catalysts. The sensor displayed fast response and recovery behavior with a maximum sensitivity to NO2 gas at 225 degrees C. Gas sensitivity was found to be linearly proportional to the photoluminescence intensity of oxygen-vacancy-related defects in both as-fabricated and defect-controlled gas sensors by postannealing in Ar and H-2 atmosphere. This result agrees well with previous theoretical prediction that oxygen vacancies play a role of preferential adsorption sites for NO2 molecules.
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