Characterization of erbium chloride seeded gallium nitride nanocrystals
DC Field | Value | Language |
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dc.contributor.author | Ahn, J. | - |
dc.contributor.author | Mastro, M. A. | - |
dc.contributor.author | Freitas, J. A., Jr. | - |
dc.contributor.author | Kim, H. -Y. | - |
dc.contributor.author | Holm, R. T. | - |
dc.contributor.author | Eddy, C. R. | - |
dc.contributor.author | Hite, J. | - |
dc.contributor.author | Maximenko, S. I. | - |
dc.contributor.author | Kim, J. | - |
dc.date.accessioned | 2021-09-09T01:52:44Z | - |
dc.date.available | 2021-09-09T01:52:44Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-12-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122246 | - |
dc.description.abstract | A novel erbium chloride seeded growth process was developed for the growth and fabrication of erbium doped GaN nanocrystals. This erbium chloride seeded technique simplifies the delivery of erbium into a metal organic chemical vapor deposition system. Additionally, this selective growth of the GaN nanocrystal only occurred in the presence of the ErCl3 seed. Strong green emission, distinctive of the Er3+ ion, was observed in the GaN nanocrystals. (C) 2008 Elsevier B.V All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | ER-IMPLANTED GAN | - |
dc.subject | DOPED GAN | - |
dc.subject | CATHODOLUMINESCENCE | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | MICROSTRUCTURE | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | SPECTROSCOPY | - |
dc.subject | LUMINESCENCE | - |
dc.subject | GROWTH | - |
dc.title | Characterization of erbium chloride seeded gallium nitride nanocrystals | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, J. | - |
dc.identifier.doi | 10.1016/j.tsf.2008.08.170 | - |
dc.identifier.scopusid | 2-s2.0-56649089689 | - |
dc.identifier.wosid | 000262053800021 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.517, no.3, pp.1111 - 1114 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 517 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1111 | - |
dc.citation.endPage | 1114 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ER-IMPLANTED GAN | - |
dc.subject.keywordPlus | DOPED GAN | - |
dc.subject.keywordPlus | CATHODOLUMINESCENCE | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | MICROSTRUCTURE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | Gallium | - |
dc.subject.keywordAuthor | Nitrides | - |
dc.subject.keywordAuthor | Nanocrystal | - |
dc.subject.keywordAuthor | Phonon | - |
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