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Characterization of erbium chloride seeded gallium nitride nanocrystals
- Authors
- Ahn, J.; Mastro, M. A.; Freitas, J. A., Jr.; Kim, H. -Y.; Holm, R. T.; Eddy, C. R.; Hite, J.; Maximenko, S. I.; Kim, J.
- Issue Date
- 1-12월-2008
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Gallium; Nitrides; Nanocrystal; Phonon
- Citation
- THIN SOLID FILMS, v.517, no.3, pp.1111 - 1114
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 517
- Number
- 3
- Start Page
- 1111
- End Page
- 1114
- ISSN
- 0040-6090
- Abstract
- A novel erbium chloride seeded growth process was developed for the growth and fabrication of erbium doped GaN nanocrystals. This erbium chloride seeded technique simplifies the delivery of erbium into a metal organic chemical vapor deposition system. Additionally, this selective growth of the GaN nanocrystal only occurred in the presence of the ErCl3 seed. Strong green emission, distinctive of the Er3+ ion, was observed in the GaN nanocrystals. (C) 2008 Elsevier B.V All rights reserved.
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