Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method
- Authors
- Leem, Shi Jong; Shin, Young Chul; Kim, Eun Hong; Kim, Chul Min; Lee, Byoung Gyu; Moon, Youngboo; Lee, In Hwan; Kim, Tae Geun
- Issue Date
- 12월-2008
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.23, no.12
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 23
- Number
- 12
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122253
- DOI
- 10.1088/0268-1242/23/12/125039
- ISSN
- 0268-1242
- Abstract
- We report the effect of different temperature profiles on the quality of the InGaN/GaN multiple quantum well (MQW) structures by employing photoluminescence (PL) and atomic force microscopy (AFM). We adopted a two-step varied-barrier-growth temperature method to improve the structural and optical properties of the InGaN/GaN MQW layers. The low-temperature GaN barrier layer was introduced to reduce the desorption rate of the indium atoms of the InGaN well, and then the high-temperature GaN barrier was grown to reduce the defects of InGaN/GaN MQWs. When the width of the low-temperature GaN barrier was 50 angstrom and the high-temperature GaN barrier was grown at 1000 degrees C, the defect and surface roughness were significantly reduced, especially with a reduction in the depth of V-defect as low as 20 angstrom.
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