Enhancement of Light Extraction Efficiency via Inductively Coupled Plasma Etching of Block Copolymer Templates on GaN/Al2O3
DC Field | Value | Language |
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dc.contributor.author | Kim, Hong-Yeol | - |
dc.contributor.author | Kim, Taejoon | - |
dc.contributor.author | Ahn, Jae Hui | - |
dc.contributor.author | Shin, Kyusoon | - |
dc.contributor.author | Bang, Joona | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-09T02:00:42Z | - |
dc.date.available | 2021-09-09T02:00:42Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-12 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122287 | - |
dc.description.abstract | We report that nanostructured patterns can be achieved on GaN/Al2O3 by a nanofabrication method that employs the inductively coupled plasma (ICP) etching of block copolymer templates. We first prepared the nanoporous patterns of a poly(ethylene oxide-b-methyl methacrylate-b-styrene) (PEO-b-PMMA-b-PS) triblock copolymer thin film on GaN/c-Al2O3 substrates. Then, the nanostructures from PEO-b-PMMA-b-PS triblock copolymers were Successfully transferred to GaN layers using ICP etching. Room temperature photoluminescence (PL) confirmed that the PL intensity was increased by about 30% around 450 nm wavelength after the pattern transfer onto GaN/c-Al2O3 substrates. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.subject | EMITTING-DIODES | - |
dc.subject | BOTTOM-UP | - |
dc.subject | TOP-DOWN | - |
dc.subject | LITHOGRAPHY | - |
dc.subject | ARRAYS | - |
dc.subject | FILMS | - |
dc.title | Enhancement of Light Extraction Efficiency via Inductively Coupled Plasma Etching of Block Copolymer Templates on GaN/Al2O3 | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Bang, Joona | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.scopusid | 2-s2.0-70349410553 | - |
dc.identifier.wosid | 000261744200008 | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.4, no.4, pp.185 - 188 | - |
dc.relation.isPartOf | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 4 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 185 | - |
dc.citation.endPage | 188 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001294374 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.description.journalRegisteredClass | other | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | EMITTING-DIODES | - |
dc.subject.keywordPlus | BOTTOM-UP | - |
dc.subject.keywordPlus | TOP-DOWN | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | plasma etching | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | self-assembly | - |
dc.subject.keywordAuthor | block copolymer thin films | - |
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