Enhancement of Light Extraction Efficiency via Inductively Coupled Plasma Etching of Block Copolymer Templates on GaN/Al2O3
- Authors
- Kim, Hong-Yeol; Kim, Taejoon; Ahn, Jae Hui; Shin, Kyusoon; Bang, Joona; Kim, Jihyun
- Issue Date
- 12월-2008
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- plasma etching; GaN; self-assembly; block copolymer thin films
- Citation
- ELECTRONIC MATERIALS LETTERS, v.4, no.4, pp.185 - 188
- Indexed
- SCIE
SCOPUS
KCI
OTHER
- Journal Title
- ELECTRONIC MATERIALS LETTERS
- Volume
- 4
- Number
- 4
- Start Page
- 185
- End Page
- 188
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122287
- ISSN
- 1738-8090
- Abstract
- We report that nanostructured patterns can be achieved on GaN/Al2O3 by a nanofabrication method that employs the inductively coupled plasma (ICP) etching of block copolymer templates. We first prepared the nanoporous patterns of a poly(ethylene oxide-b-methyl methacrylate-b-styrene) (PEO-b-PMMA-b-PS) triblock copolymer thin film on GaN/c-Al2O3 substrates. Then, the nanostructures from PEO-b-PMMA-b-PS triblock copolymers were Successfully transferred to GaN layers using ICP etching. Room temperature photoluminescence (PL) confirmed that the PL intensity was increased by about 30% around 450 nm wavelength after the pattern transfer onto GaN/c-Al2O3 substrates.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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