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Effect of B2O3 on the Sintering Condition and Microwave Dielectric Properties of Bi-4(SiO4)(3) Ceramics
- Authors
- Joung, Mi-Ri; Kim, Jin-Seong; Song, Myung-Eun; Paik, Dong-Su; Nahm, Sahn; Paik, Jong-Hoo; Choi, Byung-Hyun
- Issue Date
- Dec-2008
- Publisher
- WILEY-BLACKWELL
- Citation
- JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.91, no.12, pp.4165 - 4167
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE AMERICAN CERAMIC SOCIETY
- Volume
- 91
- Number
- 12
- Start Page
- 4165
- End Page
- 4167
- ISSN
- 0002-7820
- Abstract
- B2O3 was added to Bi-4(SiO4)(3) ceramics to aid the densification process at low temperatures (<= 900 degrees C). When the B2O3 content was < 3.0 mol%, a porous microstructure developed for the specimens sintered at 875 degrees C. However, when the amount of B2O3 exceeded 3.0 mol%, the Bi-4(SiO4)(3) ceramics were well sintered even at 875 degrees C for 0.5 h, due to the formation of a liquid phase containing B2O3. The microwave dielectric properties were influenced by the amount of B2O3, and the 3.0 mol% B2O3-added Bi-4(SiO4)(3) ceramic sintered at 875 degrees C for 1 h showed good microwave dielectric properties of epsilon(r)=15.6, Q x f=36 281 GHz, and tau(f)=-22 ppm/degrees C.
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