Effect of Patterned Ion-Implanted Sapphire on Ultraviolet Light-Emitting Diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Jaehong | - |
dc.contributor.author | Jhin, Junggeun | - |
dc.contributor.author | Yang, Seungdo | - |
dc.contributor.author | Baek, Jonghyeob | - |
dc.contributor.author | Lee, Jaesang | - |
dc.contributor.author | Byun, Dongjin | - |
dc.date.accessioned | 2021-09-09T02:52:25Z | - |
dc.date.available | 2021-09-09T02:52:25Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-11 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122436 | - |
dc.description.abstract | Ultraviolet (UV) diodes (LEDs) were fabricated oil patterned-ion-implanted sapphire (PIIS) substrates using metalorganic chemical vapor deposition. The crystal qualities of the n-GaN epilayer grown on the patterned-N+-ion-implanted sapphire substrate Were improved compared with that of the n-GaN epilayer grown oil a conventional sapphire substrate.. The optical properties of the undoped GaN and n-GaN epilayers grown on the PIIS substrate were improved. The light intensity of the UV LED at 100 mA oil the PIIS chip was 78% higher than that of the conventional LED. This increase in light intensity is Clue to the relaxation of the misfit strain at hi-h temperature and the contribution of the internal free energies to the enhancement in structural and optical properties. [DOI: 10.1143/JJAP.47.8265] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | GAN | - |
dc.subject | SUBSTRATE | - |
dc.title | Effect of Patterned Ion-Implanted Sapphire on Ultraviolet Light-Emitting Diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Byun, Dongjin | - |
dc.identifier.doi | 10.1143/JJAP.47.8265 | - |
dc.identifier.scopusid | 2-s2.0-58749106450 | - |
dc.identifier.wosid | 000261311400006 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.11, pp.8265 - 8268 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 47 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 8265 | - |
dc.citation.endPage | 8268 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordAuthor | LED | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | implantation | - |
dc.subject.keywordAuthor | pattern | - |
dc.subject.keywordAuthor | MOCVD | - |
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