Effect of Patterned Ion-Implanted Sapphire on Ultraviolet Light-Emitting Diodes
- Authors
- Choi, Jaehong; Jhin, Junggeun; Yang, Seungdo; Baek, Jonghyeob; Lee, Jaesang; Byun, Dongjin
- Issue Date
- 11월-2008
- Publisher
- IOP PUBLISHING LTD
- Keywords
- LED; GaN; implantation; pattern; MOCVD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.11, pp.8265 - 8268
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 47
- Number
- 11
- Start Page
- 8265
- End Page
- 8268
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122436
- DOI
- 10.1143/JJAP.47.8265
- ISSN
- 0021-4922
- Abstract
- Ultraviolet (UV) diodes (LEDs) were fabricated oil patterned-ion-implanted sapphire (PIIS) substrates using metalorganic chemical vapor deposition. The crystal qualities of the n-GaN epilayer grown on the patterned-N+-ion-implanted sapphire substrate Were improved compared with that of the n-GaN epilayer grown oil a conventional sapphire substrate.. The optical properties of the undoped GaN and n-GaN epilayers grown on the PIIS substrate were improved. The light intensity of the UV LED at 100 mA oil the PIIS chip was 78% higher than that of the conventional LED. This increase in light intensity is Clue to the relaxation of the misfit strain at hi-h temperature and the contribution of the internal free energies to the enhancement in structural and optical properties. [DOI: 10.1143/JJAP.47.8265]
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