Reduction of Buffer Leakage in AlGaN/GaN HEMTs with an AlGaN Current-Blocking Barrier by using a Two-Dimensional Simulation
DC Field | Value | Language |
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dc.contributor.author | Kim, Su Jin | - |
dc.contributor.author | Kim, Dong Ho | - |
dc.contributor.author | Kim, Jae Moo | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.contributor.author | Choi, Hong Goo | - |
dc.contributor.author | Hahn, Cheol-Koo | - |
dc.date.accessioned | 2021-09-09T02:53:49Z | - |
dc.date.available | 2021-09-09T02:53:49Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-11 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122444 | - |
dc.description.abstract | We report improved transport characteristics for of AlGaN/GaN/AlGaN double heterostructure (DH) high-electron-mobility transistors (HEMTs) with an AlGaN current-blocking-barrier (CBB) structure. The proposed device features a 40-nm-thick AlGaN CBB embedded into a conventional AlGaN/GaN HEMT to prevent the two-dimensional electron gas (2-DEG) of the HEMT from spilling over the buffer layer, effectively reducing the buffer leakage current. Simulation results clearly indicate that the proposed AlGaN/GaN/AlGaN DH-HEMT has not only better current confinement of the 2-DEG channel but also less leakage currents into the GaN buffer layer compared with the conventional AlGaN/GaN HEMT. In the DH-HEMT with an AlGaN CBB, we observed an approximately 56.9 % improvement in the maximum drain current density (I-D,I- max) and a 16 % improvement in maximum transconductance (g(m, max)) at zero gate bias condition over the conventional SH-HEMT. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | ELECTRON-MOBILITY | - |
dc.subject | GAN | - |
dc.subject | TRANSISTOR | - |
dc.subject | OPERATION | - |
dc.subject | DC | - |
dc.title | Reduction of Buffer Leakage in AlGaN/GaN HEMTs with an AlGaN Current-Blocking Barrier by using a Two-Dimensional Simulation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.wosid | 000260935000044 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.5, pp.2572 - 2577 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 53 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 2572 | - |
dc.citation.endPage | 2577 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001469777 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | ELECTRON-MOBILITY | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordPlus | DC | - |
dc.subject.keywordAuthor | High-electron-mobility transistor | - |
dc.subject.keywordAuthor | Buffer leakage | - |
dc.subject.keywordAuthor | Double heterostructure | - |
dc.subject.keywordAuthor | 2-DEG | - |
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