Electrical Characteristics of the Backgated Bottom-Up Silicon Nanowire FETs
DC Field | Value | Language |
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dc.contributor.author | Kim, DukSoo | - |
dc.contributor.author | Jung, YoungChai | - |
dc.contributor.author | Park, MiYoung | - |
dc.contributor.author | Kim, ByungSung | - |
dc.contributor.author | Hong, SuHeon | - |
dc.contributor.author | Choi, MinSu | - |
dc.contributor.author | Kang, MyungGil | - |
dc.contributor.author | Yu, YunSeop | - |
dc.contributor.author | Whang, Dongmok | - |
dc.contributor.author | Hwang, SungWoo | - |
dc.date.accessioned | 2021-09-09T03:09:28Z | - |
dc.date.available | 2021-09-09T03:09:28Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-11 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122504 | - |
dc.description.abstract | We report the electrical characteristics of backgated silicon nanowire (SiNW) FETs at temperatures ranging from 300 to 160 K. The voltage drop along the intrinsic part of the silicon nanowire (SiNW) was obtained by modeling the source/drain contacts as Schottky diodes. The field effect mobility values obtained from the extracted intrinsic voltage drop showed activation behaviors in the given temperature range. The activation energy was smaller than that of previously reported Ge nanowires. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | TEMPERATURE-DEPENDENCE | - |
dc.subject | CARBON NANOTUBES | - |
dc.title | Electrical Characteristics of the Backgated Bottom-Up Silicon Nanowire FETs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, SungWoo | - |
dc.identifier.doi | 10.1109/TNANO.2008.2005636 | - |
dc.identifier.scopusid | 2-s2.0-58149269278 | - |
dc.identifier.wosid | 000262364400004 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.7, no.6, pp.683 - 687 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.title | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.volume | 7 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 683 | - |
dc.citation.endPage | 687 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | TEMPERATURE-DEPENDENCE | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordAuthor | Back gate | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | mobility extraction | - |
dc.subject.keywordAuthor | silicon nanowire (SiNW) FET | - |
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